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IXTH 20N60
IXTM 20N60
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-247 AD (IXTH) Outline
min. typ. max.
g fs
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
11
18
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
4500
420
pF
pF
1
2
3
C rss
140
pF
t d(on)
20
40
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
43
60
ns
t d(off)
R G = 2 ?, (External)
70
90
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
40
60
ns
Dim.
Millimeter
Inches
Q g(on)
150
170
nC
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A 1
A 2
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
29
60
0.25
40
85
0.42
nC
nC
K/W
K/W
2.2 2.54 .087 .102
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b 1
1.65 2.13 .065 .084
b 2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
L1 4.50 .177
? P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
I S
I SM
V GS = 0 V
Repetitive;
20
80
A
A
TO-204AE (IXTM) Outline
V SD
t rr
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
600
1.5
V
ns
Pins
1 - Gate 2 - Source
Case - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
? b
? D
e
e1
6.4 11.4
1.53 3.42
1.45 1.60
22.22
10.67 11.17
5.21 5.71
.250 .450
.060 .135
.057 .063
.875
.420 .440
.205 .225
L 11.18 12.19
? p 3.84 4.19
? p 1 3.84 4.19
q 30.15 BSC
R 12.58 13.33
R1 3.33 4.77
s 16.64 17.14
.440
.151
.151
1.187
.495
.131
.655
.480
.165
.165
BSC
.525
.188
.675
? 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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